Sample 43

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
14	11	Si wafer - not bonded	50	0	5.0	50	750	60	10	43.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 18.254 um
Calculated remaining resist as 8.45um, indicating an erosion of 0.29um in 10 minutes of etching
This equates to an erosion rate of 29 nm/min
The etch depth of 9.80um in 10 mins indicates an etch rate of 980.0nm/min
The selectivity is therefore 34.12:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	18.253800
Remaining resist (um)	8.453800
Semiconductor etched(um)	9.800000
Etch rate (nm/min)	980.000000
Erosion rate (nm/min)	28.720000
Selectivity	34.122563